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2SC1472(K)
Silicon NPN Epitaxial, Darlington
Application
High gain amplifier
Outline
TO-92 (1)
3 2
1. Emitter 2. Collector 3. Base 3 2 1
1
2SC1472 (K)
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 -55 to +150 Unit V V V mA mA mW C C
2
2SC1472 (K)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 30 -- --
1 1
Typ -- -- -- -- -- -- -- -- -- -- 60
Max -- 100 100 100000 -- -- 1.5 2.0 -- 10 --
Unit V nA nA
Test conditions I C = 1 mA, RBE = VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 mA, VCE = 5 V I C = 100 mA, VCE = 5 V (Pulse Test) I C = 400 mA, VCE = 5 V (Pulse Test)
Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CBO I EBO hFE1* hFE2*
2000 3000 3000 -- -- 50 -- --
hFE3* 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob t on
V V MHz pF ns
I C = 100 mA, IB = 0.1 mA I C = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 mA I B2 = -IB1
Turn off time Storage time Note: hFE1 hFE2 hFE3 A
t off t stg B
-- --
800 350
-- --
ns ns
1. The 2SC1472(K) is grouped by h FE as follows. 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min
Switching Time Test Circuit D.U.T. 6k 50 -6 V 6k 0.002 -+ 50 100 0.002 -+ 50 11 V Unit R : C : F CRT 13 V Input 0 Output 0
Response Waveform
90% 10% 90% 10% td ton tstg toff 90% 10%
P.G. tr, tf 15 ns PW 10 s duty ratio 10%
3
2SC1472 (K)
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics
35 30 25
500
20 8 16 14 1
400
12 10
8
400
300
6 200 4 100 2 A
200
PC = 50 0m
W
IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 2.0 4.0 6.0 8.0 10 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics 200 Collector Cutoff Current ICEO (nA)
0 5. 5 4. 0 4.
Collector Cutoff Current vs. Collector to Emitter Voltage 10,000 100 1,000 75 100 10 1.0 0.1 TC = 25C RBE =
Collector Current IC (mA)
160
Pulse
3.5
120
3.0
80
2.5
2.0
50
40
1.5 1.0
0.5 A
PC = 500
mW
IB = 0
0
10 20 30 40 50 Collector to Emitter Voltage VCE (V)
0.01 0 10 20 30 Collector to Emitter Voltage VCE (V)
4
2SC1472 (K)
DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) DC Current Transfer Ratio hFE (x103) 80 70 60 VCE = 5 V Pulse 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 2 5 10 20 50 100 200 500 Collector Current IC (mA) Pulse IC = 1,000 IB
Ta = -5 -25 0 25 50 75 100 0C
Collector to Emitter Saturation Voltage vs. Collector Current
30 20 10 0 2.0
Ta =
40
5.0 10 20 50 100 200 500 Collector Current IC (mA)
10 0 5075 C
50
25 0
-25 -50
Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage VCE (sat) (V) 2.4 Base to Emitter Saturation Voltage VBE (sat) (V) 2.0 1.6 1.2 0.8 0.4 0 1 3 10 30 100 300 1,000 Base Current IB (A) 20 50 100 200 IC = 500 mA Ta = 25C Pulse
Base to Emitter Saturation Voltage vs. Collector Current 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 Collector Current IC (mA) 500 IC = 1,000 IB Pulse
Ta = -50C -25 0 25 50 75 100
5
2SC1472 (K)
Input and Output Capacitance vs. Voltage Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) 10 30 8 f = 1 MHz 10 Switching Time t (s) 3 1.0 tstg 0.3 0.1 0 0.1 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) 0.03 0.3 td ton IC = 100 IB1 = -100 IB2 VCC = 10.5 V Switching Time vs. Collector Current
6 C (I = 0) ib C 4 Cob(IE = 0)
toff
2
1.0 3 10 30 100 300 Base Current IC (mA)
Response Waveform Switching Time Test Circuit D.U.T. CRT 13 V Input 0 P.G. tr, tf 15 ns PW 10 s duty ratio 10% 50 -6 V 0.002 -+ 50 0.002 -+ 50 Unit R : Output C : F 0 10.5 V 10% 90% 10% td ton tstg toff 90% 10% 90%
6
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max 0.5 0.1 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-92 (1) Conforms Conforms 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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